Specification: 25
SVM SUBSTRATE:
Material: Silicon
Diameter: 100mm+/-0.5mm
Growth Method: Cz
Orientation: <1-0-0>+/-1°
Type/Dopant: P/Boron
Resistivity: 0.001 – 0.005 ohm-cm
Thickness: 525+/-25 μm
Front Surface: Polished
Back Surface: Etched
Flat(s):2 per SEMI standard
Film(s): 2,850Å of WET Thermal Oxide ± 5%
Specification: 25
SVM SUBSTRATE:
Material: Silicon
Diameter: 100mm+/-0.5mm
Growth Method: Cz
Orientation: <1-0-0>+/-1°
Type/Dopant: P/Boron
Resistivity: 0.001 – 0.005 ohm-cm
Thickness: 525+/-25 μm
Front Surface: Polished
Back Surface: Etched
Flat(s):2 per SEMI standard
Film(s): 500Å of DRY Thermal Oxide ± 10%
